About the role#
As a process integration engineer in the 3D DRAM organization, you will work in a 300mm R&D facility. You will focus on the performance and manufacturability of next-generation memory technology. This role involves working on device components like charge storage devices and thin-film transistors.
What you'll do#
- Contribute to technology development for next-generation DRAM.
- Optimize process flows and develop solutions to meet product requirements.
- Design and run experiments in the R&D fab.
- Analyze inline, parametric, and probe data to evaluate performance and failure mechanisms.
- Engage with cross-functional teams including process development and product engineering.
What you'll need#
- Currently pursuing a PhD in Materials Science, Electrical Engineering, Physics, or Chemical Engineering.
- Must be a current student and cannot graduate prior to September 2027.
- Experience with semiconductor device fabrication.
- Knowledge of electrical and material characterization.
Location & details#
- Location: Boise, Idaho, United States.
- Modality: On-site.
- Employment: Full-time internship.
- Compensation: Paid position.
About Micron Technology
Micron Technology produces memory and storage solutions including DRAM, NAND, and NOR products. The company operates as a public organization with over 43,000 employees. Founded in 1978, it maintains its headquarters in Boise, Idaho. Micron serves various markets ranging from data centers to mobile devices.
How to get in at Micron Technology
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