Technology Development Intern, RF GaN

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    GlobalFoundries

    We shape what's essential.

    10,001+ employeesFounded 2009Malta, NYSemiconductor Manufacturing
    Actively hiringPaidSummer 2027Semiconductor Manufacturing
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    Best applied by Oct 5

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    About the role#

    This is a summer 2027 internship based at our Fab9 facility in Essex Junction, Vermont. You will join the Technology Development team to work on RF GaN semiconductor technologies. This role involves working alongside process, integration, and device engineers to develop new process flows and devices for various market applications.

    What you'll do#

    • Design and set up process modules and integration, including in-line physical and electrical measurement structures.
    • Organize, run, and analyze experiments for GaN technology development to meet performance, reliability, and yield objectives.
    • Partner with internal teams including testing, failure analysis, unit module process, reliability, manufacturing, modeling, and TCAD simulation.
    • Ensure appropriate process controls and electrical tests are available for new devices.
    • Perform physical and electrical device simulations and characterization analysis, including DC, AC, and RF testing of GaN HEMTs, capacitors, diodes, and resistors.
    • Support technology development milestones from the initial concept through to manufacturing installation.
    • Maintain all safety standards and follow Environmental, Health, Safety, and Security programs.

    What you'll need#

    • Current enrollment in a Masters or Ph.D. program in Electrical Engineering, Solid State Physics, or a related field.
    • Minimum 3.0 GPA and good academic standing.
    • Basic knowledge of modern semiconductor device physics, characterization, and processing with a focus on wide band gap materials like the III-N system.
    • Experience with GaN HEMT device characterization, such as DC, s-parameter, loadpull, and pulsed I-V, as well as fabrication experience.
    • Ability to work at least 40 hours per week.
    • Proficiency in English, both written and verbal.
    • Preferred qualifications include prior internship or co-op experience, leadership experience, project management skills, and research experience in GaN e-mode or d-mode HEMT devices.

    Location & details#

    • Location: Essex Junction, Vermont, USA
    • Term: Summer 2027
    • Modality: On-site
    • Position type: Full-time internship
    • Compensation: Paid position

    About GlobalFoundries

    GlobalFoundries manufactures semiconductors for various industries including automotive, aerospace, and data centers. The company operates manufacturing facilities across the United States, Europe, and Asia. It was founded in 2009 and currently functions as a public company. The organization employs over 10,000 people.

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