Technology Development Intern, RF GaN

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    GlobalFoundries

    We shape what's essential.

    10,001+ employeesFounded 2009Malta, NYSemiconductor Manufacturing
    Actively hiringPaidSummer 2027Semiconductor Manufacturing
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    Best applied by Oct 5

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    About the role#

    This is a full-time, on-site internship for Summer 2027 based in Essex Junction, Vermont. You will join the Technology Development team at our 200mm manufacturing facility, Fab9. The role focuses on advancing RF GaN technologies and developing new process flows and devices for emerging market applications.

    What you'll do#

    • Collaborate with device, process integration, and program management teams to design and set up process modules.
    • Organize, run, and analyze experiments to meet objectives for performance, reliability, and yield.
    • Work with Fab9 engineering teams, including testing, failure analysis, and reliability, to ensure program success.
    • Ensure appropriate process controls and electrical tests are available for new devices.
    • Perform physical and electrical device simulation, including characterization of GaN HEMTs, capacitors, diodes, and resistors.
    • Support technology development qualification milestones from initial concept through manufacturing installation.
    • Perform all tasks in a safe and responsible manner.

    What you'll need#

    • Current enrollment in a Masters or Ph. D. program in Electrical Engineering, Solid State Physics, or a related field.
    • Minimum 3.0 GPA and good academic standing.
    • Basic knowledge of modern semiconductor device physics and processing, specifically regarding wide band gap materials like the III-N system.
    • Experience with GaN HEMT device fabrication and characterization, including DC, s-parameter, loadpull, and pulsed I-V testing.
    • Ability to work at least 40 hours per week.
    • Proficiency in English, both written and verbal.
    • Preferred: Prior internship experience, leadership experience, and project management skills.
    • Preferred: Research background in GaN e-mode or d-mode HEMT RF or power devices.
    • Preferred: Understanding of WBG device physics, such as traps, dispersion, self-heating, and buffer design.
    • Preferred: Experience in semiconductor processing for RF, including CMOS or SiGe technologies.

    Location & details#

    • Location: Essex Junction, Vermont, USA.
    • Term: Summer 2027.
    • Modality: On-site, full-time (40 hours per week).
    • Compensation: This is a paid internship.

    About GlobalFoundries

    GlobalFoundries manufactures semiconductors for various industries including automotive, aerospace, and data centers. The company operates manufacturing facilities across the United States, Europe, and Asia. It was founded in 2009 and currently functions as a public company. The organization employs over 10,000 people.

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