Intern - Next-Generation HBM Architecture

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    Micron Technology

    We're accelerating the transformation of information to intelligence.

    10,001+ employeesFounded 1978Boise, IdahoSemiconductor Manufacturing
    Actively hiringPaidrollingSemiconductor Manufacturing
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    About the role#

    The Memory Systems Architecture team at Micron defines next-generation High Bandwidth Memory (HBM) solutions. These technologies power artificial intelligence, high-performance computing, and data center applications. As an intern, you will contribute to the architecture and microarchitecture development of future HBM products. You will work alongside experienced architects to evaluate new memory features, analyze trade-offs, and develop models that improve performance, reliability, and efficiency.

    What you'll do#

    • Research and evaluate HBM architecture features, including memory scheduling, refresh management, reliability, thermal behavior, and memory controller interactions.
    • Develop and enhance performance models, simulators, and analytical tools using Python, C++, or similar technologies to assess architectural trade-offs.
    • Analyze workload behavior, simulation results, and architectural data to provide recommendations for future product development.
    • Utilize AI-assisted engineering tools to accelerate software development, specification analysis, and technical documentation while validating outputs with sound engineering judgment.
    • Collaborate with architecture, design, and cross-functional teams to support feature definition, design reviews, and roadmap development.

    What you'll need#

    • Currently pursuing a Bachelor's, Master's, or PhD in Electrical Engineering, Computer Engineering, Computer Science, or a related field.
    • 0-2 years of relevant experience through internships, research, or academic projects in computer architecture, memory systems, or semiconductor design.
    • Programming experience with Python and at least one of the following: C++, SystemVerilog, or similar engineering languages.
    • Coursework or project experience in computer architecture, memory hierarchies, DRAM technologies, interconnects, or hardware system design.
    • Ability to read and interpret technical specifications, datasheets, or hardware interface definitions.
    • Experience utilizing AI coding assistants and LLMs such as GitHub Copilot, Claude, or ChatGPT as part of engineering workflows.
    • Strong analytical, problem-solving, and communication skills.
    • Familiarity with memory simulation environments like Ramulator, DRAMSim, or gem5 is preferred.
    • Knowledge of HBM, DDR, LPDDR, GDDR, or memory controller architectures is a plus.
    • Understanding of memory reliability concepts such as ECC, repair mechanisms, or RAS features is beneficial.

    Location & details#

    • Location: Folsom, California
    • Employment Type: Full-time
    • Modality: On-site
    • Compensation: This is a paid internship.

    About Micron Technology

    Micron Technology produces memory and storage solutions including DRAM, NAND, and NOR products. The company operates as a public organization with over 43,000 employees. Founded in 1978, it maintains its headquarters in Boise, Idaho. Micron serves various markets ranging from data centers to mobile devices.

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