About the role#
As a DRAM Device Engineer Intern, you will work within the manufacturing Fab to support the development and production of next-generation DRAM products. This role provides hands-on experience in semiconductor process integration, electrical data analysis, and technology development.
What you'll do#
- Support the integration of process modules across different DRAM module loops.
- Analyze electrical and inline data to find yield detractors and process anomalies.
- Work with cross-functional teams to drive continuous improvement.
- Document your findings and present updates to engineering and leadership teams.
- Use AI tools to improve your problem-solving efficiency and productivity.
What you'll need#
- You are currently a PhD student in Electrical Engineering or Materials Engineering.
- Strong knowledge of semiconductor devices.
- Basic knowledge of mainstream memory technologies like DRAM, NAND, or NOR.
- Experience with statistical data analysis and semiconductor process flow.
- Good communication skills and a self-motivated approach to work.
- Ability to commit to an internship of at least 6 months.
- Advanced CMOS or capacitor knowledge is preferred, and knowledge of DRAM process flow is a plus.
Location & details#
- Location: Boise, Idaho, United States.
- Modality: On-site.
- Employment: Full-time internship.
- Compensation: This is a paid position.
About Micron Technology
Micron Technology produces memory and storage solutions including DRAM, NAND, and NOR products. The company operates as a public organization with over 43,000 employees. Founded in 1978, it maintains its headquarters in Boise, Idaho. Micron serves various markets ranging from data centers to mobile devices.
How to get in at Micron Technology
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