About the role#
As an intern in the Advanced DRAM Device and Cell Technology team, you will contribute to the development and characterization of future memory technologies. You will work on experimental studies and data analysis to improve cell performance, density, and reliability. This role involves collaborating with multidisciplinary teams to evaluate new materials, device architectures, and integration schemes.
What you'll do#
- Evaluate DRAM access devices, capacitors, and cell stack elements through characterization and data analysis.
- Design and implement silicon experiments, performing electrical, physical, and materials characterization.
- Analyze device and array-level behavior, including sensing margins, activation characteristics, and retention performance.
- Collaborate with modeling, design, process integration, and manufacturing teams to support technology optimization.
- Use AI-assisted and generative AI tools to enhance data analysis and technical decision-making.
What you'll need#
- Currently pursuing an M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, or a related field.
- Must not graduate prior to September 2027.
- Understanding of semiconductor fundamentals, including device physics, materials science, and characterization techniques.
- Experience with electrical characterization, device testing, and statistical analysis.
- Proficiency with data analysis and scripting tools such as Python, MATLAB, or JMP.
Location & details#
- Location: Boise, Idaho, United States.
- Work modality: On-site.
- Employment type: Full-time.
- This position is paid.
About Micron Technology
Micron Technology produces memory and storage solutions including DRAM, NAND, and NOR products. The company operates as a public organization with over 43,000 employees. Founded in 1978, it maintains its headquarters in Boise, Idaho. Micron serves various markets ranging from data centers to mobile devices.
How to get in at Micron Technology
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